
Product Description
This 10W high-power GaN anti-drone module is a professional UAV signal suppression device engineered for reliable and stable drone countermeasure operations within the 200-300MHz frequency band.
Adopting advanced GaN semiconductor technology, this jammer module offers higher power efficiency, power density and lower heat output than conventional silicon RF modules, enabling stable high-output operation for prolonged anti-drone missions.
Fitted with a high-performance RF circulator, it shields the internal RF amplifier against reverse signal interference and reflected power damage to boost stability, anti-interference performance and lifespan during continuous full-power operation. Featuring a standard N-Female connector, it allows easy installation and flexible assembly with great compatibility for seamless integration into custom anti-drone jammers, counter-UAV and RF signal suppression systems.
Designed for precise frequency band coverage of 200MHz to 300MHz, the module outputs stable 10W/40dBm jamming power to effectively suppress and block UAV remote control and navigation signals in the corresponding band, forcing illegal drones to lose control, terminate transmission or execute automatic return and landing. With a compact, rugged and industrial-grade structure, it adapts to various complex outdoor and tactical working environments, widely applicable for security monitoring, venue protection, border defense, industrial park anti-drone protection and other scenarios.
Product Features
- Frequency band: 200-300MHz
- GaN chip, stable 10W (40dBm) output
- Built-in integrated circulator for better isolation
- N female RF connector for easy assembly
- Compact aluminum alloy housing with good heat dissipation
- Customizable frequency band and output power as requested
Product Specifications
| Frequency Range | 200-300MHz |
| Operating Voltage | 24 V DC |
| Flatness | ±0.5 dB |
| Output Power | 10 W/40 dBm |
| Current Consumption | 1.5 A@24 V |
| Efficiency | 45%@40 dBm |
| LED State | Red |
| Operating Temperature | -30℃ ~ +85℃ |
| Storage Temperature | -40℃ ~ +150℃ |
| Operating Humidity | <95%RH |
| RF Connector | Output: N-Female |
| Power Socket | 20 cm red/black wire |
| Shell Material | Aluminum |
| Shell Size | 128.5*53*17 mm |
| Net Weight | 0.26 kg |
Package List
1 x N-type GaN+Circulator Jammer Module