Product Description
This 30W GaN jammer module is a high-power, wideband interference source engineered for the 830–960MHz frequency range, specifically designed to disrupt 2G cellular low-band networks as well as Sub-1GHz IoT and RFID systems. Featuring advanced gallium nitride amplification, an integrated circulator, and a rugged N-Female connector, this module is a professional-grade core component for OEM integrators, system builders, and authorized RF professionals who require dependable, high-output jamming performance in a durable package.
At the heart of the module is a gallium nitride (GaN) power amplifier stage. GaN technology delivers substantially higher power density, superior thermal conductivity, and greater efficiency than traditional LDMOS or bipolar designs. This enables the module to sustain a powerful 30W RF output while maintaining linearity and stability under continuous duty cycles. The result is deeper, more consistent jamming coverage, reduced heat buildup, and extended component lifespan—essential for systems that must operate reliably over extended periods.
Product Features
- Frequency: 830–960MHz wideband coverage
- Advanced GaN technology, stable 30W (45dBm) output
- Integrated circulator for enhanced reliability
- RF connector: N-Female
- Compact size, efficient heat dissipation & rugged housing
Product Application
2G cellular low-band – effectively disrupts GSM850, GSM900, CDMA, EGSM, GPRS, and EDGE networks operating in the 850MHz and 900MHz bands.
Sub-1G IoT – blocks LoRa 868MHz (EU), LoRa 915MHz (US), Sigfox, smart meters, and LPWAN devices.
RFID systems – interferes with UHF RFID readers, tags, and inventory tracking systems in the 860–960MHz range.
Additional uses – wireless telemetry, industrial remote controls, and other 900MHz systems.
Custom frequency bands & power are available, feel free to contact us for your requirements.
Product Specifications
| Frequency Range | 830-960MHz |
| Operating Voltage | 28 V DC |
| Flatness | ±0.5 dB |
| Output Power | 30 W/45 dBm |
| Current Consumption | 2.8 A@28 V |
| Efficiency | 45%@45 dBm |
| LED State | Red |
| Operating Temperature | -30℃ ~ +85℃ |
| Storage Temperature | -40℃ ~ +150℃ |
| Operating Humidity | <95%RH |
| RF Connector | Output: N-Female |
| Power Socket | 20 cm red/black wire |
| Shell Material | Aluminum |
| Shell Size | 128.5*53*17 mm |
| Net Weight | 0.26 kg |
Package List
1 x N-type GaN+Circulator Jammer Module